512GB Samsung PM9B1 M.2 (2280) PCI-e Gen4 x4 NVMe Solid State Drive
- 512GB
- Triple Core
- NVMe 1.4
- PCIe 4.0 x4
- Sequential Read: 3,500 MB/s
- Sequential Write: 2,500 MB/s
- Random Read: 430,000 IOPS
- Random Write: 400,000 IOPS
R747.00 incl vat
| Specifications | |
| Product Code | MZ-VL45120 |
| Solid-State-Drive | |
| Capacity | 512 GB |
| Overprovisioning | 35.2 GB / 7.4 % |
| Released | 2022 |
| Part Number | MZVL4512HBLU-00BL7 |
| Market | Consumer |
| Physical | |
| Form Factor | M.2 2280 (Single-Sided) |
| Interface | PCIe 4.0 x4 |
| Protocol | NVMe 1.4 |
| Controller | |
| Manufacturer | Marvell |
| Name | 88SS1322 Whistler Plus |
| Architecture | Arm Cortex -R5 |
| Core Count | Triple-Core |
| Foundry | TSMC FinFET |
| Process | 12 nm |
| Flash Channels | 4 @ 1,200 MT/s |
| Chip Enables | 4 |
| Controller Features | HMB (enabled) |
| NAND Flash | |
| Manufacturer | Samsung |
| Name | V-NAND V6 |
| Part Number | K9OUGY8J5B-CCK0 |
| Type | TLC |
| Technology | 128-layer |
| Speed | 1200 MT/s |
| Capacity | 1 chip @ 4 Tbit |
| Toggle | 4 |
| Topology | Charge Trap |
| Die Size | 102 mm² |
| (5.0 Gbit/mm²) | |
| Dies per Chip | 8 dies @ 512 Gbit |
| Planes per Die | 2 |
| Decks per Die | 1 |
| Word Lines | 136 per NAND String |
| 94.1% Vertical Efficiency | |
| Read Time (tR) | 45 µs |
| Program Time (tProg) | 390 µs |
| Block Erase Time (tBERS) | 3.5 ms |
| Die Read Speed | 711 MB/s |
| Die Write Speed | 82 MB/s |
| Endurance | 3000 P/E Cycles |
| (up to) | |
| Page Size | 16 KB |
| DRAM Cache | |
| Type | None |
| Host-Memory-Buffer (HMB) | 64 MB |
| Performance | |
| Sequential Read | 3,500 MB/s |
| Sequential Write | 2,500 MB/s |
| Random Read | 430,000 IOPS |
| Random Write | 400,000 IOPS |
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